Dummy-grade 8-inch SiC wafer substrates for power devices High-purity artificial diamond (also known as Moissanite). ＜SPEC Overview＞ Diameter: 200 ± 0.25 mm Thickness: 350 ± 25 μm Surface Orientation: 4° toward <11-20> ± 0.5° Notch Depth: 1 ~ 1.25 mm Notch Orientation: Along [1-100] ± 2° Orthogonal misorientation: ± 5 Micropipe Density: ≤ 5 /cm2 Resistivity (all): 0.014-0.028 Ω·cm TTV: ≤ 10 µm Bow (absolute value): ≤ 35 µm Warp: ≤ 45 μm Surface Finish: Double-side polish, Si epi-face CMP, C face optical polish Surface Metal Contamination: ≤ 5E+10 atoms/cm2 We handle products from various SiC substrate manufacturers. Please contact Kayou for inquiries.